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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Effect of charge storage engineering on the NO2 gas sensing properties of a WO3 FET-type gas sensor with a horizontal floating-gate

Home Effect of charge storage engineering on the NO2 gas sensing properties of a WO3 FET-type gas sensor with a horizontal floating-gate

Effect of charge storage engineering on the NO2 gas sensing properties of a WO3 FET-type gas sensor with a horizontal floating-gate

저자

Wonjun Shin et al.

저널 정보

Nanoscale

출간연도

2021

링크

https://doi.org/10.1039/D1NR00513H

Effect of charge storage engineering on the NO2 gas sensing properties of a WO3 FET-type gas sensor with a horizontal floating-gate