Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure
저자
Il Hwan Cho et al.
저널 정보
Journal of Vacuum Science & Technology B
출간연도
2006
Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure