Home High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices
저자
Sung-Man Cho et al.
저널 정보
IEEE Transactions on Device and Materials Reliability
출간연도
2008
링크
https://doi.org/10.1109/TDMR.2007.914014
High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices
