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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

Home Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

저자

Sang-Goo Jung et al.

저널 정보

IEEE TRANSACTIONS ON ELECTRON DEVICES

출간연도

2008

링크

https://doi.org/10.1109/TED.2008.916769

Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects