Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias
저자
Byung-Kil Choi et al.
저널 정보
Japanese Journal of Applied Physics
출간연도
2009
Threshold Voltage Modeling of Fully Depleted Nanoscale Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel by Considering Drain Bias