Length Effect of Spacer-Type Storage Node in High-Density 2-bit/Cell Silicon–Oxide–Nitride–Oxide–Silicon NOR Flash Cell Based on Recessed Channel Structure
저자
Kyoung-Rok HAN et al.
저널 정보
Japanese Journal of Applied Physics
출간연도
2007
Length Effect of Spacer-Type Storage Node in High-Density 2-bit/Cell Silicon–Oxide–Nitride–Oxide–Silicon NOR Flash Cell Based on Recessed Channel Structure