바로가기 메뉴
본문 바로가기
푸터 바로가기
TOP

 

Two-Bit/Cell Characteristics of Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Devices with Recessed Channel Structure

저자

Kyoung-Rok Han et al.

저널 정보

Japanese Journal of Applied Physics

출간연도

2008

Two-Bit/Cell Characteristics of Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Devices with Recessed Channel Structure