Professor Jong-Ho Lee is internationally recognized as the original developer of the 3D Bulk FinFET technology.

Professor Jong-Ho Lee has been identified as the original developer of the 3D Bulk FinFET technology according to ETNews. Professor Lee's patent on the 3D Bulk FinFET technology, submitted and registered in US, has been in competition with Intel's tri-gate MOSFET technology to claim originality of the technology. The 3D Bulk FinFET technology became the industry standard for nanoscaled transistor devices incorporated by world leading semiconductor manufacturers such as Intel, Samsung, TSMC, and so on.