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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Analytic Oxide Capacitance Model of Double and Surrounding-Gate MetalOxideSemiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance

Analytic Oxide Capacitance Model of Double and Surrounding-Gate MetalOxideSemiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance

저자

Byung-Kil Choi et al.

저널 정보

Japanese Journal of Applied Physics

출간연도

2010

링크

https://doi.org/10.1143/JJAP.49.104201

Analytic Oxide Capacitance Model of Double and Surrounding-Gate MetalOxideSemiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance