HomeOptimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate
HomeOptimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate
Optimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate
Optimization of channel structure and bias condition for signal-to-noise ratio improvement in Si-based FET-type gas sensor with horizontal floating-gate