Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor
저자
Heesang Kim et al.
저널 정보
Japanese Journal of Applied Physics
출간연도
2010
Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor